Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Tip pachet
HVMDIP
Timp montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Latime
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+175 °C
Inaltime
3.37mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Impachetare pentru productie (Banda)
1
P.O.A.
Impachetare pentru productie (Banda)
1
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Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Tip pachet
HVMDIP
Timp montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Latime
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+175 °C
Inaltime
3.37mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs