STMicroelectronics, Thyristor 600 V, 10 A 6 mA 153 A

Designed with high immunity switching to external surges, this device offers robust switching up to its 150°C maximum Tj. The combination of noise immunity and low gate triggering current allows to design strong and compact control circuit.

• High junction temperature: Tj = 150 °C
• Gate triggering current IGT = 6 mA
• High noise immunity dV/dt = 200 V/μs up to 150 °C
• Blocking voltage VDRM/VRRM = 600 V
• High turn-on current rise dI/dt: 100 A/μs