Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Diode
Montare
Surface
Tip pachet
TO-263
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Numar pini
2
Peak Reverse Current Ir
35μA
Maximum Forward Voltage Vf
2.25V
Frecventa minima de auto-rezonanta
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
200A
Temperatura maxima de lucru
175°C
Lungime
28.25mm
Inaltime
4.5mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 2.750,00
€ 1,10 Buc. (Pe o rola de 2500) (fara TVA)
€ 3.327,50
€ 1,331 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 2.750,00
€ 1,10 Buc. (Pe o rola de 2500) (fara TVA)
€ 3.327,50
€ 1,331 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Diode
Montare
Surface
Tip pachet
TO-263
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Numar pini
2
Peak Reverse Current Ir
35μA
Maximum Forward Voltage Vf
2.25V
Frecventa minima de auto-rezonanta
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
200A
Temperatura maxima de lucru
175°C
Lungime
28.25mm
Inaltime
4.5mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
