Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Montare
Through Hole
Tip pachet
TO-247
Maximum Continuous Forward Current If
40A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
2x Common Cathode Pair
Series
STPS
Rectifier Type
Rectifier Diode
Numar pini
3
Temperatura minima de lucru
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
140A
Temperatura maxima de lucru
175°C
Lungime
15.75mm
Inaltime
34.95mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii Produs
The STMicroelectronics SiC diode is available in TO-247 and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Informatii despre stoc temporar indisponibile
€ 522,00
€ 17,40 Each (In a Tube of 30) (fara TVA)
€ 631,62
€ 21,054 Each (In a Tube of 30) (cu TVA)
30
€ 522,00
€ 17,40 Each (In a Tube of 30) (fara TVA)
€ 631,62
€ 21,054 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Montare
Through Hole
Tip pachet
TO-247
Maximum Continuous Forward Current If
40A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
2x Common Cathode Pair
Series
STPS
Rectifier Type
Rectifier Diode
Numar pini
3
Temperatura minima de lucru
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
140A
Temperatura maxima de lucru
175°C
Lungime
15.75mm
Inaltime
34.95mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii Produs
The STMicroelectronics SiC diode is available in TO-247 and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.