Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Diode
Montare
Surface
Tip pachet
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Numar pini
2
Maximum Forward Voltage Vf
2.25V
Temperatura minima de lucru
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Peak Reverse Current Ir
60μA
Temperatura maxima de lucru
175°C
Standards/Approvals
RoHS
Latime
10.58mm
Lungime
15.95mm
Inaltime
4.3mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
Informatii despre stoc temporar indisponibile
P.O.A.
Buc. (Pe o rola de 1000) (fara TVA)
1000
P.O.A.
Buc. (Pe o rola de 1000) (fara TVA)
Informatii despre stoc temporar indisponibile
1000
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Diode
Montare
Surface
Tip pachet
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Numar pini
2
Maximum Forward Voltage Vf
2.25V
Temperatura minima de lucru
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Peak Reverse Current Ir
60μA
Temperatura maxima de lucru
175°C
Standards/Approvals
RoHS
Latime
10.58mm
Lungime
15.95mm
Inaltime
4.3mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.