Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMontare
Through Hole
Product Type
Rectifier & Schottky Diode
Tip pachet
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Series
STPS
Diode Configuration
Single
Rectifier Type
Rectifier Diode
Numar pini
2
Temperatura minima de lucru
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Temperatura maxima de lucru
175°C
Standards/Approvals
RoHS
Lungime
15.9mm
Inaltime
41.2mm
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii Produs
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Informatii despre stoc temporar indisponibile
€ 216,00
€ 7,20 Each (In a Tube of 30) (fara TVA)
€ 261,36
€ 8,712 Each (In a Tube of 30) (cu TVA)
30
€ 216,00
€ 7,20 Each (In a Tube of 30) (fara TVA)
€ 261,36
€ 8,712 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMontare
Through Hole
Product Type
Rectifier & Schottky Diode
Tip pachet
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Series
STPS
Diode Configuration
Single
Rectifier Type
Rectifier Diode
Numar pini
2
Temperatura minima de lucru
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Temperatura maxima de lucru
175°C
Standards/Approvals
RoHS
Lungime
15.9mm
Inaltime
41.2mm
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii Produs
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.