Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Montare
Through Hole
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
2x Common Cathode Pair
Series
STPSC2
Rectifier Type
Schottky
Numar pini
2
Peak Reverse Current Ir
200μA
Maximum Forward Voltage Vf
1.45V
Peak Reverse Recovery Time trr
0ns
Standards/Approvals
AEC‑Q101, RoHS, ECOPACK2, PPAP
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii Produs
The STMicroelectronics SiC Diode, molded in a DO-247 LL package with long leads, is an ultra-high-performance power Schottky rectifier. It is built using a silicon carbide substrate, enabling a low VF Schottky structure with a 650 V rating. Thanks to its Schottky design, it exhibits no recovery at turn-off and minimal ringing. Its capacitive turn-off behaviour is very low and remains stable across temperature variations.
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Informatii despre stoc temporar indisponibile
€ 7,20
€ 7,20 Buc. (fara TVA)
€ 8,71
€ 8,71 Buc. (cu TVA)
1
€ 7,20
€ 7,20 Buc. (fara TVA)
€ 8,71
€ 8,71 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
1
| Cantitate | Pret unitar |
|---|---|
| 1 - 9 | € 7,20 |
| 10 - 99 | € 4,14 |
| 100 - 599 | € 3,85 |
| 600+ | € 3,49 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Montare
Through Hole
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
2x Common Cathode Pair
Series
STPSC2
Rectifier Type
Schottky
Numar pini
2
Peak Reverse Current Ir
200μA
Maximum Forward Voltage Vf
1.45V
Peak Reverse Recovery Time trr
0ns
Standards/Approvals
AEC‑Q101, RoHS, ECOPACK2, PPAP
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii Produs
The STMicroelectronics SiC Diode, molded in a DO-247 LL package with long leads, is an ultra-high-performance power Schottky rectifier. It is built using a silicon carbide substrate, enabling a low VF Schottky structure with a 650 V rating. Thanks to its Schottky design, it exhibits no recovery at turn-off and minimal ringing. Its capacitive turn-off behaviour is very low and remains stable across temperature variations.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
