Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Montare
Through Hole
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
2x Common Cathode Pair
Series
STPSC2
Rectifier Type
Schottky
Numar pini
2
Peak Reverse Current Ir
200μA
Maximum Forward Voltage Vf
1.45V
Peak Reverse Recovery Time trr
0ns
Standards/Approvals
AEC‑Q101, RoHS, ECOPACK2, PPAP
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii Produs
The STMicroelectronics SiC Diode, molded in a DO-247 LL package with long leads, is an ultra-high-performance power Schottky rectifier. It is built using a silicon carbide substrate, enabling a low VF Schottky structure with a 650 V rating. Thanks to its Schottky design, it exhibits no recovery at turn-off and minimal ringing. Its capacitive turn-off behaviour is very low and remains stable across temperature variations.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 50,10
€ 1,67 Each (In a Tube of 30) (fara TVA)
€ 60,62
€ 2,021 Each (In a Tube of 30) (cu TVA)
30
€ 50,10
€ 1,67 Each (In a Tube of 30) (fara TVA)
€ 60,62
€ 2,021 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Montare
Through Hole
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
2x Common Cathode Pair
Series
STPSC2
Rectifier Type
Schottky
Numar pini
2
Peak Reverse Current Ir
200μA
Maximum Forward Voltage Vf
1.45V
Peak Reverse Recovery Time trr
0ns
Standards/Approvals
AEC‑Q101, RoHS, ECOPACK2, PPAP
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii Produs
The STMicroelectronics SiC Diode, molded in a DO-247 LL package with long leads, is an ultra-high-performance power Schottky rectifier. It is built using a silicon carbide substrate, enabling a low VF Schottky structure with a 650 V rating. Thanks to its Schottky design, it exhibits no recovery at turn-off and minimal ringing. Its capacitive turn-off behaviour is very low and remains stable across temperature variations.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
