Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Diode
Montare
Through Hole
Tip pachet
DO-247
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Rectifier Type
Schottky
Numar pini
2
Peak Reverse Current Ir
400μA
Maximum Forward Voltage Vf
2.25V
Frecventa minima de auto-rezonanta
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
420A
Temperatura maxima de lucru
175°C
Lungime
16.26mm
Inaltime
21.46mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 125,70
€ 4,19 Each (In a Tube of 30) (fara TVA)
€ 152,10
€ 5,07 Each (In a Tube of 30) (cu TVA)
30
€ 125,70
€ 4,19 Each (In a Tube of 30) (fara TVA)
€ 152,10
€ 5,07 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Diode
Montare
Through Hole
Tip pachet
DO-247
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Rectifier Type
Schottky
Numar pini
2
Peak Reverse Current Ir
400μA
Maximum Forward Voltage Vf
2.25V
Frecventa minima de auto-rezonanta
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
420A
Temperatura maxima de lucru
175°C
Lungime
16.26mm
Inaltime
21.46mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
