STMicroelectronics STGYA75H120DF2, Type N-Channel IGBT, 150 A 1200 V, 3-Pin Max247, Through Hole

The STMicroelectronics IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

• Maximum junction temperature TJ = 175 °C
• 5 μs of short-circuit withstand time
• VCE(sat) = 2.1 V (typ.) @ IC = 75 A
• Tight parameter distribution
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast recovery antiparallel diode