Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
260W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Frecventa minima de auto-rezonanta
-55°C
Temperatura maxima de lucru
175°C
Lungime
15.9mm
Inaltime
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Detalii Produs
The STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
Informatii despre stoc temporar indisponibile
€ 16,10
€ 3,22 Buc. (Intr-un pachet de 5) (fara TVA)
€ 19,48
€ 3,896 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 16,10
€ 3,22 Buc. (Intr-un pachet de 5) (fara TVA)
€ 19,48
€ 3,896 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 45 | € 3,22 | € 16,10 |
| 50 - 120 | € 3,00 | € 15,00 |
| 125+ | € 2,83 | € 14,15 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
260W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Frecventa minima de auto-rezonanta
-55°C
Temperatura maxima de lucru
175°C
Lungime
15.9mm
Inaltime
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Detalii Produs
The STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.