Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
80A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
375W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Switching Speed
1MHz
Frecventa minima de auto-rezonanta
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Gate Emitter Voltage VGEO
±20 V
Temperatura maxima de lucru
175°C
Lungime
14.8mm
Standards/Approvals
ECOPACK
Latime
15.75mm
Series
V
Inaltime
20.15mm
Automotive Standard
No
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informatii despre stoc temporar indisponibile
€ 213,50
€ 4,27 Each (Supplied in a Tube) (fara TVA)
€ 258,34
€ 5,167 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
50
€ 213,50
€ 4,27 Each (Supplied in a Tube) (fara TVA)
€ 258,34
€ 5,167 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
50
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 120 | € 4,27 | € 21,35 |
| 125+ | € 4,01 | € 20,05 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
80A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
375W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Switching Speed
1MHz
Frecventa minima de auto-rezonanta
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maximum Gate Emitter Voltage VGEO
±20 V
Temperatura maxima de lucru
175°C
Lungime
14.8mm
Standards/Approvals
ECOPACK
Latime
15.75mm
Series
V
Inaltime
20.15mm
Automotive Standard
No
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
