Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
30A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Temperatura minima de lucru
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Temperatura maxima de lucru
175°C
Inaltime
20.15mm
Standards/Approvals
RoHS
Series
HB
Lungime
15.75mm
Automotive Standard
No
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 5,70
€ 2,85 Buc. (Intr-un pachet de 2) (fara TVA)
€ 6,90
€ 3,448 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 5,70
€ 2,85 Buc. (Intr-un pachet de 2) (fara TVA)
€ 6,90
€ 3,448 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 2 - 18 | € 2,85 | € 5,70 |
| 20 - 98 | € 2,70 | € 5,40 |
| 100 - 198 | € 2,60 | € 5,20 |
| 200+ | € 2,23 | € 4,46 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
30A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Temperatura minima de lucru
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Temperatura maxima de lucru
175°C
Inaltime
20.15mm
Standards/Approvals
RoHS
Series
HB
Lungime
15.75mm
Automotive Standard
No
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
