Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current Ic
145A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
441W
Tip pachet
TO-247-4
Montare
Through Hole
Channel Type
Type N
Numar pini
4
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
175°C
Lungime
15.9mm
Inaltime
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Detalii Produs
The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 169,50
€ 5,65 Each (In a Tube of 30) (fara TVA)
€ 205,10
€ 6,836 Each (In a Tube of 30) (cu TVA)
30
€ 169,50
€ 5,65 Each (In a Tube of 30) (fara TVA)
€ 205,10
€ 6,836 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current Ic
145A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
441W
Tip pachet
TO-247-4
Montare
Through Hole
Channel Type
Type N
Numar pini
4
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
175°C
Lungime
15.9mm
Inaltime
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Detalii Produs
The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
