Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Tip pachet
TO-220
Numar pini
3
Maximum Gate Emitter Voltage VGEO
20 V
Tara de origine
China
Detalii Produs
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
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Informatii despre stoc temporar indisponibile
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Standard
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Tip pachet
TO-220
Numar pini
3
Maximum Gate Emitter Voltage VGEO
20 V
Tara de origine
China
Detalii Produs
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
