Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
20A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Tip pachet
TO-220
Montare
Through Hole
Channel Type
N
Numar pini
3
Switching Speed
1MHz
Temperatura minima de lucru
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Latime
4.6mm
Lungime
10.4mm
Inaltime
9.15mm
Automotive Standard
No
Tara de origine
Malaysia
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informatii despre stoc temporar indisponibile
€ 47,50
€ 0,95 Each (In a Tube of 50) (fara TVA)
€ 57,48
€ 1,15 Each (In a Tube of 50) (cu TVA)
50
€ 47,50
€ 0,95 Each (In a Tube of 50) (fara TVA)
€ 57,48
€ 1,15 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
20A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Tip pachet
TO-220
Montare
Through Hole
Channel Type
N
Numar pini
3
Switching Speed
1MHz
Temperatura minima de lucru
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Latime
4.6mm
Lungime
10.4mm
Inaltime
9.15mm
Automotive Standard
No
Tara de origine
Malaysia
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
