Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Renesas ElectronicsMontare
Surface
Product Type
Photocoupler
Tip iesire
Phototransistor
Maximum Forward Voltage
1.4V
Number of Channels
1
Packaging
Magazine
Number of Pins
4
Tip pachet
Gull Wing
Curent de intrare
DC
Timp de crestere tipic
3μs
Maximum Input Current
400mA
Isolation Voltage
5000Vrms
Temperatura minima de lucru
-55°C
Maximum Current Transfer Ratio
400%
Temperatura maxima de lucru
110°C
Minimum Current Transfer Ratio
50%
Standards/Approvals
EN, CSA, UL
Timp de scadere tipic
5μs
Series
PS
Automotive Standard
No
Detalii Produs
The Renesas Electronics optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. It has high isolation voltage.
Informatii despre stoc temporar indisponibile
€ 42,00
€ 0,42 Each (In a Tube of 100) (fara TVA)
€ 50,82
€ 0,508 Each (In a Tube of 100) (cu TVA)
100
€ 42,00
€ 0,42 Each (In a Tube of 100) (fara TVA)
€ 50,82
€ 0,508 Each (In a Tube of 100) (cu TVA)
Informatii despre stoc temporar indisponibile
100
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 100 - 100 | € 0,42 | € 42,00 |
| 200 - 400 | € 0,39 | € 39,00 |
| 500 - 900 | € 0,38 | € 38,00 |
| 1000 - 1900 | € 0,31 | € 31,00 |
| 2000+ | € 0,30 | € 30,00 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Renesas ElectronicsMontare
Surface
Product Type
Photocoupler
Tip iesire
Phototransistor
Maximum Forward Voltage
1.4V
Number of Channels
1
Packaging
Magazine
Number of Pins
4
Tip pachet
Gull Wing
Curent de intrare
DC
Timp de crestere tipic
3μs
Maximum Input Current
400mA
Isolation Voltage
5000Vrms
Temperatura minima de lucru
-55°C
Maximum Current Transfer Ratio
400%
Temperatura maxima de lucru
110°C
Minimum Current Transfer Ratio
50%
Standards/Approvals
EN, CSA, UL
Timp de scadere tipic
5μs
Series
PS
Automotive Standard
No
Detalii Produs
The Renesas Electronics optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. It has high isolation voltage.
