Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiProduct Type
Optocoupler
Montare
Surface
Maximum Forward Voltage
1.3V
Number of Channels
2
Packaging
Tape & Reel
Number of Pins
8
Tip pachet
SMT
Curent de intrare
DC
Timp de crestere tipic
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Frecventa minima de auto-rezonanta
-55°C
Maximum Current Transfer Ratio
600%
Temperatura maxima de lucru
100°C
Timp de scadere tipic
2.4μs
Minimum Current Transfer Ratio
50%
Standards/Approvals
IEC, EN, UL
Series
MCT
Automotive Standard
No
Detalii Produs
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
Informatii despre stoc temporar indisponibile
€ 240,00
€ 0,24 Buc. (Pe o rola de 1000) (fara TVA)
€ 290,40
€ 0,29 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 240,00
€ 0,24 Buc. (Pe o rola de 1000) (fara TVA)
€ 290,40
€ 0,29 Buc. (Pe o rola de 1000) (cu TVA)
Informatii despre stoc temporar indisponibile
1000
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiProduct Type
Optocoupler
Montare
Surface
Maximum Forward Voltage
1.3V
Number of Channels
2
Packaging
Tape & Reel
Number of Pins
8
Tip pachet
SMT
Curent de intrare
DC
Timp de crestere tipic
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Frecventa minima de auto-rezonanta
-55°C
Maximum Current Transfer Ratio
600%
Temperatura maxima de lucru
100°C
Timp de scadere tipic
2.4μs
Minimum Current Transfer Ratio
50%
Standards/Approvals
IEC, EN, UL
Series
MCT
Automotive Standard
No
Detalii Produs
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
