Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.9mm
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
0.94mm
Detalii produs
N-Channel Power MOSFET, 50V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 2,00
€ 0,08 Buc. (Intr-un pachet de 25) (fara TVA)
€ 2,42
€ 0,097 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 2,00
€ 0,08 Buc. (Intr-un pachet de 25) (fara TVA)
€ 2,42
€ 0,097 Buc. (Intr-un pachet de 25) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
25
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 25 - 225 | € 0,08 | € 2,00 |
| 250 - 1225 | € 0,04 | € 1,00 |
| 1250 - 2475 | € 0,03 | € 0,75 |
| 2500 - 12475 | € 0,03 | € 0,75 |
| 12500+ | € 0,03 | € 0,75 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.9mm
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Inaltime
0.94mm
Detalii produs


