Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
MicrochipProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
800mA
Maximum Collector Emitter Voltage Vceo
50V dc
Tip pachet
UBC
Montare
Surface
Temperatura minima de lucru
-55°C
Transistor Polarity
NPN
Temperatura maxima de lucru
200°C
Numar pini
3
Standards/Approvals
No
Series
2N2222A
Automotive Standard
No
Detalii Produs
The Microchip Radiation Hardened NPN Silicon Switching Transistor is a 3 pin small signal BJT designed for high reliability applications in radiation prone environments. With a voltage rating of 40V, current capacity of 800mA, and power dissipation of 500mW, it provides efficient switching performance. This transistor is specifically engineered to withstand radiation exposure, making it ideal for use in space, military, and other demanding applications where durability and stable operation are critical.
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Informatii despre stoc temporar indisponibile
€ 257,74
€ 5,26 Buc. (Intr-o cutie de 49) (fara TVA)
€ 311,87
€ 6,365 Buc. (Intr-o cutie de 49) (cu TVA)
49
€ 257,74
€ 5,26 Buc. (Intr-o cutie de 49) (fara TVA)
€ 311,87
€ 6,365 Buc. (Intr-o cutie de 49) (cu TVA)
Informatii despre stoc temporar indisponibile
49
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
MicrochipProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
800mA
Maximum Collector Emitter Voltage Vceo
50V dc
Tip pachet
UBC
Montare
Surface
Temperatura minima de lucru
-55°C
Transistor Polarity
NPN
Temperatura maxima de lucru
200°C
Numar pini
3
Standards/Approvals
No
Series
2N2222A
Automotive Standard
No
Detalii Produs
The Microchip Radiation Hardened NPN Silicon Switching Transistor is a 3 pin small signal BJT designed for high reliability applications in radiation prone environments. With a voltage rating of 40V, current capacity of 800mA, and power dissipation of 500mW, it provides efficient switching performance. This transistor is specifically engineered to withstand radiation exposure, making it ideal for use in space, military, and other demanding applications where durability and stable operation are critical.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
