Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
55 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3 + Tab
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.7mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
6.7mm
Typical Gate Charge @ Vgs
7 nC @ 10 V
Number of Elements per Chip
1
Inaltime
1.7mm
Serie
HEXFET
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
P.O.A.
Each (In a Tube of 80) (fara TVA)
80
P.O.A.
Each (In a Tube of 80) (fara TVA)
Informatii despre stoc temporar indisponibile
80
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
55 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3 + Tab
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.7mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
6.7mm
Typical Gate Charge @ Vgs
7 nC @ 10 V
Number of Elements per Chip
1
Inaltime
1.7mm
Serie
HEXFET
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


