Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsConverter Function
FVC, VFC
Product Type
Voltage-to-Frequency Converter
Converter Type
Voltage
Full Scale Frequency
1kHz
Linearity Error
1 %FSR
Tip alimentare
Single
Tensiune de alimentare maxima
30V
Tensiune de alimentare minima
4.5V
Montare
Surface
Tip pachet
SSOP
Numar pini
10
Temperatura minima de lucru
-40°C
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Lungime
5mm
Inaltime
1.5mm
Automotive Standard
No
Detalii Produs
The device is a high voltage converter smartly integrating an 800 V avalanche-rugged power MOSFET with PWM current mode control. The power MOSFET with 800 V breakdown voltage allows the extended input voltage range to be applied, as well as the size of the DRAIN snubber circuit to be reduced. This IC meets the most stringent energy-saving standards as it has very low consumption and operates in pulse frequency modulation under light load.
Informatii despre stoc temporar indisponibile
€ 8,00
€ 0,80 Buc. (Intr-un pachet de 10) (fara TVA)
€ 9,68
€ 0,968 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 8,00
€ 0,80 Buc. (Intr-un pachet de 10) (fara TVA)
€ 9,68
€ 0,968 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsConverter Function
FVC, VFC
Product Type
Voltage-to-Frequency Converter
Converter Type
Voltage
Full Scale Frequency
1kHz
Linearity Error
1 %FSR
Tip alimentare
Single
Tensiune de alimentare maxima
30V
Tensiune de alimentare minima
4.5V
Montare
Surface
Tip pachet
SSOP
Numar pini
10
Temperatura minima de lucru
-40°C
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Lungime
5mm
Inaltime
1.5mm
Automotive Standard
No
Detalii Produs
The device is a high voltage converter smartly integrating an 800 V avalanche-rugged power MOSFET with PWM current mode control. The power MOSFET with 800 V breakdown voltage allows the extended input voltage range to be applied, as well as the size of the DRAIN snubber circuit to be reduced. This IC meets the most stringent energy-saving standards as it has very low consumption and operates in pulse frequency modulation under light load.