Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
200A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
600W
Tip pachet
ISOTOP
Montare
Clamp
Channel Type
Type N
Numar pini
4
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
150°C
Lungime
38.2mm
Inaltime
12.2mm
Standards/Approvals
ECOPACK, JESD97
Series
Powermesh
Automotive Standard
No
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informatii despre stoc temporar indisponibile
€ 25,97
€ 25,97 Each (Supplied in a Tube) (fara TVA)
€ 31,42
€ 31,42 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
1
€ 25,97
€ 25,97 Each (Supplied in a Tube) (fara TVA)
€ 31,42
€ 31,42 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
1
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
200A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
600W
Tip pachet
ISOTOP
Montare
Clamp
Channel Type
Type N
Numar pini
4
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
150°C
Lungime
38.2mm
Inaltime
12.2mm
Standards/Approvals
ECOPACK, JESD97
Series
Powermesh
Automotive Standard
No
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
