Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Gate Driver Module
Curent iesire
6A
Numar pini
16
Tip pachet
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Tensiune de alimentare minima
3.3V
Number of Drivers
2
Tensiune de alimentare maxima
5V
Frecventa minima de auto-rezonanta
-40°C
Temperatura maxima de lucru
175°C
Series
STDRI
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
Informatii despre stoc temporar indisponibile
€ 5.450,00
€ 2,18 Buc. (Pe o rola de 2500) (fara TVA)
€ 6.594,50
€ 2,638 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 5.450,00
€ 2,18 Buc. (Pe o rola de 2500) (fara TVA)
€ 6.594,50
€ 2,638 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Gate Driver Module
Curent iesire
6A
Numar pini
16
Tip pachet
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Tensiune de alimentare minima
3.3V
Number of Drivers
2
Tensiune de alimentare maxima
5V
Frecventa minima de auto-rezonanta
-40°C
Temperatura maxima de lucru
175°C
Series
STDRI
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.