Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Diode
Montare
Surface
Tip pachet
PowerFLAT
Maximum Continuous Forward Current If
8A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Numar pini
5
Peak Reverse Current Ir
65μA
Maximum Forward Voltage Vf
1.95V
Temperatura minima de lucru
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
800A
Temperatura maxima de lucru
175°C
Lungime
7.9mm
Inaltime
0.75mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics 650V power schottky silicon carbide diode has a current rating of 8A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. It enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom & network, industrial or renewable energy domain.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 6.450,00
€ 2,15 Buc. (Pe o rola de 3000) (fara TVA)
€ 7.804,50
€ 2,602 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 6.450,00
€ 2,15 Buc. (Pe o rola de 3000) (fara TVA)
€ 7.804,50
€ 2,602 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Diode
Montare
Surface
Tip pachet
PowerFLAT
Maximum Continuous Forward Current If
8A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC
Numar pini
5
Peak Reverse Current Ir
65μA
Maximum Forward Voltage Vf
1.95V
Temperatura minima de lucru
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
800A
Temperatura maxima de lucru
175°C
Lungime
7.9mm
Inaltime
0.75mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics 650V power schottky silicon carbide diode has a current rating of 8A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. It enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom & network, industrial or renewable energy domain.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
