Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Schottky Diode
Montare
Through Hole
Tip pachet
TO-220
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Numar pini
2
Peak Reverse Current Ir
170μA
Maximum Forward Voltage Vf
1.3V
Temperatura minima de lucru
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
385A
Temperatura maxima de lucru
175°C
Lungime
15.75mm
Inaltime
4.6mm
Tara de origine
China
Detalii Produs
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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Informatii despre stoc temporar indisponibile
€ 2,01
€ 2,01 Buc. (fara TVA)
€ 2,43
€ 2,43 Buc. (cu TVA)
1
€ 2,01
€ 2,01 Buc. (fara TVA)
€ 2,43
€ 2,43 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
1
| Cantitate | Pret unitar |
|---|---|
| 1 - 9 | € 2,01 |
| 10 - 99 | € 1,39 |
| 100 - 499 | € 1,19 |
| 500 - 999 | € 1,14 |
| 1000+ | € 1,09 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Schottky Diode
Montare
Through Hole
Tip pachet
TO-220
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Numar pini
2
Peak Reverse Current Ir
170μA
Maximum Forward Voltage Vf
1.3V
Temperatura minima de lucru
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
385A
Temperatura maxima de lucru
175°C
Lungime
15.75mm
Inaltime
4.6mm
Tara de origine
China
Detalii Produs
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
