Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Diode
Montare
Surface
Tip pachet
TO-263
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
STPSC10H12G2Y-TR
Numar pini
2
Peak Reverse Current Ir
30μA
Maximum Forward Voltage Vf
2.25V
Temperatura minima de lucru
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
60A
Temperatura maxima de lucru
175°C
Lungime
15.95mm
Inaltime
4.3mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics 10 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
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Informatii despre stoc temporar indisponibile
€ 4.320,00
€ 4,32 Buc. (Pe o rola de 1000) (fara TVA)
€ 5.227,20
€ 5,227 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 4.320,00
€ 4,32 Buc. (Pe o rola de 1000) (fara TVA)
€ 5.227,20
€ 5,227 Buc. (Pe o rola de 1000) (cu TVA)
Informatii despre stoc temporar indisponibile
1000
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Diode
Montare
Surface
Tip pachet
TO-263
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
STPSC10H12G2Y-TR
Numar pini
2
Peak Reverse Current Ir
30μA
Maximum Forward Voltage Vf
2.25V
Temperatura minima de lucru
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
60A
Temperatura maxima de lucru
175°C
Lungime
15.95mm
Inaltime
4.3mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics 10 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
