Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current Ic
86A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
272W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
175°C
Lungime
15.9mm
Inaltime
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 15,40
€ 3,08 Buc. (Intr-un pachet de 5) (fara TVA)
€ 18,63
€ 3,727 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 15,40
€ 3,08 Buc. (Intr-un pachet de 5) (fara TVA)
€ 18,63
€ 3,727 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 45 | € 3,08 | € 15,40 |
| 50 - 120 | € 2,76 | € 13,80 |
| 125+ | € 2,27 | € 11,35 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current Ic
86A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
272W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
175°C
Lungime
15.9mm
Inaltime
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
