Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current Ic
50A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
167W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.1V
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
175°C
Lungime
15.9mm
Inaltime
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 75,60
€ 2,52 Each (In a Tube of 30) (fara TVA)
€ 91,48
€ 3,049 Each (In a Tube of 30) (cu TVA)
30
€ 75,60
€ 2,52 Each (In a Tube of 30) (fara TVA)
€ 91,48
€ 3,049 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 30 - 270 | € 2,52 | € 75,60 |
| 300 - 720 | € 2,41 | € 72,30 |
| 750+ | € 2,32 | € 69,60 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current Ic
50A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
167W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.1V
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
175°C
Lungime
15.9mm
Inaltime
5.1mm
Standards/Approvals
RoHS
Series
STG
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
