Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
120A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
469W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Switching Speed
1MHz
Temperatura minima de lucru
-40°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Temperatura maxima de lucru
175°C
Inaltime
20.15mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Lungime
15.75mm
Automotive Standard
No
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informatii despre stoc temporar indisponibile
€ 4,59
€ 4,59 Buc. (fara TVA)
€ 5,55
€ 5,55 Buc. (cu TVA)
Standard
1
€ 4,59
€ 4,59 Buc. (fara TVA)
€ 5,55
€ 5,55 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
120A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
469W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Switching Speed
1MHz
Temperatura minima de lucru
-40°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Temperatura maxima de lucru
175°C
Inaltime
20.15mm
Standards/Approvals
No
Series
Trench Gate Field Stop
Lungime
15.75mm
Automotive Standard
No
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
