Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Montare
Through Hole
Tip pachet
TO-247
Maximum Continuous Forward Current If
40A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Dual
Series
STPS
Rectifier Type
Rectifier Diode
Numar pini
3
Frecventa minima de auto-rezonanta
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
140A
Temperatura maxima de lucru
175°C
Lungime
15.75mm
Inaltime
34.95mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii Produs
The STMicroelectronics schottky silicon carbide diode available in TO-247, is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Informatii despre stoc temporar indisponibile
€ 367,50
€ 12,25 Each (In a Tube of 30) (fara TVA)
€ 444,68
€ 14,822 Each (In a Tube of 30) (cu TVA)
30
€ 367,50
€ 12,25 Each (In a Tube of 30) (fara TVA)
€ 444,68
€ 14,822 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Montare
Through Hole
Tip pachet
TO-247
Maximum Continuous Forward Current If
40A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Dual
Series
STPS
Rectifier Type
Rectifier Diode
Numar pini
3
Frecventa minima de auto-rezonanta
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
140A
Temperatura maxima de lucru
175°C
Lungime
15.75mm
Inaltime
34.95mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii Produs
The STMicroelectronics schottky silicon carbide diode available in TO-247, is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.