Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Schottky Diode
Montare
Through Hole
Tip pachet
HU3PAK
Maximum Continuous Forward Current If
30A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Numar pini
7
Peak Reverse Current Ir
1200μA
Maximum Forward Voltage Vf
1.3V
Temperatura minima de lucru
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Temperatura maxima de lucru
175°C
Lungime
11.9mm
Inaltime
3.6mm
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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Informatii despre stoc temporar indisponibile
€ 2.898,00
€ 4,83 Buc. (Pe o rola de 600) (fara TVA)
€ 3.506,58
€ 5,844 Buc. (Pe o rola de 600) (cu TVA)
600
€ 2.898,00
€ 4,83 Buc. (Pe o rola de 600) (fara TVA)
€ 3.506,58
€ 5,844 Buc. (Pe o rola de 600) (cu TVA)
Informatii despre stoc temporar indisponibile
600
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Schottky Diode
Montare
Through Hole
Tip pachet
HU3PAK
Maximum Continuous Forward Current If
30A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Numar pini
7
Peak Reverse Current Ir
1200μA
Maximum Forward Voltage Vf
1.3V
Temperatura minima de lucru
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Temperatura maxima de lucru
175°C
Lungime
11.9mm
Inaltime
3.6mm
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
