Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current Ic
7.5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
38W
Tip pachet
TO-220
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.95V
Frecventa minima de auto-rezonanta
-55°C
Temperatura maxima de lucru
150°C
Standards/Approvals
RoHS
Automotive Standard
No
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 6,10
€ 1,22 Buc. (Intr-un pachet de 5) (fara TVA)
€ 7,38
€ 1,476 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 6,10
€ 1,22 Buc. (Intr-un pachet de 5) (fara TVA)
€ 7,38
€ 1,476 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 45 | € 1,22 | € 6,10 |
| 50 - 245 | € 0,98 | € 4,90 |
| 250 - 495 | € 0,74 | € 3,70 |
| 500+ | € 0,65 | € 3,25 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current Ic
7.5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
38W
Tip pachet
TO-220
Montare
Through Hole
Channel Type
Type N
Numar pini
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.95V
Frecventa minima de auto-rezonanta
-55°C
Temperatura maxima de lucru
150°C
Standards/Approvals
RoHS
Automotive Standard
No
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
