Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Tip pachet
TO-252
Montare
Surface
Channel Type
Type N
Numar pini
3
Temperatura minima de lucru
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Temperatura maxima de lucru
175°C
Inaltime
2.4mm
Standards/Approvals
RoHS
Lungime
6.6mm
Series
H
Automotive Standard
No
Energy Rating
221mJ
Tara de origine
China
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informatii despre stoc temporar indisponibile
€ 7,20
€ 0,72 Buc. (Intr-un pachet de 10) (fara TVA)
€ 8,71
€ 0,871 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 7,20
€ 0,72 Buc. (Intr-un pachet de 10) (fara TVA)
€ 8,71
€ 0,871 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 10 - 90 | € 0,72 | € 7,20 |
| 100+ | € 0,48 | € 4,80 |
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Tip pachet
TO-252
Montare
Surface
Channel Type
Type N
Numar pini
3
Temperatura minima de lucru
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Temperatura maxima de lucru
175°C
Inaltime
2.4mm
Standards/Approvals
RoHS
Lungime
6.6mm
Series
H
Automotive Standard
No
Energy Rating
221mJ
Tara de origine
China
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
