STMicroelectronics Bipolar Transistor, 8 A NPN, 450 V, 3-Pin TO-220

This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial Planar technology. It uses a cellular emitter structure with Planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.

• High voltage capability
• Very high switching speed
• Applications
• Four lamp electronic ballast for:
• 120 V mains in push-pull configuration
• 277 V mains in half bridge current feed configuration