Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
MicrochipMemory Size
64kbit
Interfata
Parallel
Tip pachet
SOIC
Tip montare
Surface Mount
Numar pini
28
Organisation
8K x 8 bit
Minimum Operating Supply Voltage
4.5 V
Maximum Operating Supply Voltage
5.5 V
Number of Bits per Word
8bit
Dimensiuni
18.1 x 7.6 x 2.35mm
Temperatura maxima de lucru
+85 °C
Maximum Random Access Time
120ns
Data Retention
10yr
Number of Words
8K
Frecventa minima de auto-rezonanta
-40 °C
Tara de origine
Taiwan, Province Of China
Detalii Produs
The Microchip AT28HC64B is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Informatii despre stoc temporar indisponibile
P.O.A.
Each (In a Tube of 27) (fara TVA)
27
P.O.A.
Each (In a Tube of 27) (fara TVA)
Informatii despre stoc temporar indisponibile
27
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
MicrochipMemory Size
64kbit
Interfata
Parallel
Tip pachet
SOIC
Tip montare
Surface Mount
Numar pini
28
Organisation
8K x 8 bit
Minimum Operating Supply Voltage
4.5 V
Maximum Operating Supply Voltage
5.5 V
Number of Bits per Word
8bit
Dimensiuni
18.1 x 7.6 x 2.35mm
Temperatura maxima de lucru
+85 °C
Maximum Random Access Time
120ns
Data Retention
10yr
Number of Words
8K
Frecventa minima de auto-rezonanta
-40 °C
Tara de origine
Taiwan, Province Of China
Detalii Produs
The Microchip AT28HC64B is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
