Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Serie
D Series
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Lungime
10.51mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Latime
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
9.01mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 5,50
€ 1,10 Buc. (Intr-un pachet de 5) (fara TVA)
€ 6,54
€ 1,309 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 5,50
€ 1,10 Buc. (Intr-un pachet de 5) (fara TVA)
€ 6,54
€ 1,309 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,10 | € 5,50 |
50 - 245 | € 1,07 | € 5,35 |
250 - 495 | € 0,81 | € 4,05 |
500 - 1245 | € 0,75 | € 3,75 |
1250+ | € 0,64 | € 3,20 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Serie
D Series
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Lungime
10.51mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Latime
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
9.01mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs