Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Detalii produs
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,11
Buc. (fara TVA)
€ 1,32
Buc. (cu TVA)
Standard
1
€ 1,11
Buc. (fara TVA)
€ 1,32
Buc. (cu TVA)
Standard
1
Cumpara in pachete mari
Cantitate | Pret unitar |
---|---|
1 - 9 | € 1,11 |
10 - 49 | € 0,95 |
50 - 99 | € 0,88 |
100 - 249 | € 0,80 |
250+ | € 0,73 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Latime
4.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
9.01mm
Detalii produs