Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Tip pachet
SC-70-6L
Serie
TrenchFET
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
1.35mm
Typical Gate Charge @ Vgs
26 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.2mm
Inaltime
1mm
Automotive Standard
AEC-Q101
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China
€ 660,00
€ 0,22 Buc. (Pe o rola de 3000) (fara TVA)
€ 798,60
€ 0,266 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 660,00
€ 0,22 Buc. (Pe o rola de 3000) (fara TVA)
€ 798,60
€ 0,266 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Tip pachet
SC-70-6L
Serie
TrenchFET
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
1.35mm
Typical Gate Charge @ Vgs
26 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.2mm
Inaltime
1mm
Automotive Standard
AEC-Q101
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China