Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
1500 V
Serie
MDmesh
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
30 nC @ 10 V
Latime
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.75mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.15mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 7,23
€ 7,23 Buc. (fara TVA)
€ 8,75
€ 8,75 Buc. (cu TVA)
Standard
1
€ 7,23
€ 7,23 Buc. (fara TVA)
€ 8,75
€ 8,75 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
Cantitate | Pret unitar |
---|---|
1 - 4 | € 7,23 |
5 - 9 | € 6,81 |
10 - 24 | € 6,08 |
25 - 49 | € 5,40 |
50+ | € 5,08 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
1500 V
Serie
MDmesh
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
30 nC @ 10 V
Latime
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.75mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.15mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs