Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
950 V
Serie
MDmesh, SuperMESH
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.6mm
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Inaltime
15.75mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Tara de origine
China
Detalii produs
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 20,30
€ 4,06 Buc. (Intr-un pachet de 5) (fara TVA)
€ 24,16
€ 4,831 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 20,30
€ 4,06 Buc. (Intr-un pachet de 5) (fara TVA)
€ 24,16
€ 4,831 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
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Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
950 V
Serie
MDmesh, SuperMESH
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.6mm
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Inaltime
15.75mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Tara de origine
China
Detalii produs