Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
252 A
Maximum Drain Source Voltage
40 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
134 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4.25mm
Lungime
5mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.2mm
Automotive Standard
AEC-Q101
Tara de origine
Philippines
€ 7,56
€ 1,89 Buc. (Livrat pe rola) (fara TVA)
€ 9,00
€ 2,249 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
4
€ 7,56
€ 1,89 Buc. (Livrat pe rola) (fara TVA)
€ 9,00
€ 2,249 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
4
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Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
252 A
Maximum Drain Source Voltage
40 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
134 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4.25mm
Lungime
5mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.2mm
Automotive Standard
AEC-Q101
Tara de origine
Philippines