Documente tehnice
Specificatii
Marca
MicrochipChannel Type
P
Maximum Continuous Drain Current
175 mA
Maximum Drain Source Voltage
40 V
Tip pachet
TO-92
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.06mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.08mm
Temperatura maxima de lucru
+150 °C
Inaltime
5.33mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
2V
Detalii produs
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
€ 59,00
€ 0,59 Each (Supplied in a Bag) (fara TVA)
€ 70,21
€ 0,702 Each (Supplied in a Bag) (cu TVA)
Impachetare pentru productie (Punga)
100
€ 59,00
€ 0,59 Each (Supplied in a Bag) (fara TVA)
€ 70,21
€ 0,702 Each (Supplied in a Bag) (cu TVA)
Impachetare pentru productie (Punga)
100
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Documente tehnice
Specificatii
Marca
MicrochipChannel Type
P
Maximum Continuous Drain Current
175 mA
Maximum Drain Source Voltage
40 V
Tip pachet
TO-92
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.06mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.08mm
Temperatura maxima de lucru
+150 °C
Inaltime
5.33mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
2V
Detalii produs
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.