Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Serie
Si4435DYPbF
Tip pachet
SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
40 nC @ 10 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Informatii indisponibile despre stoc
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€ 960,00
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4000
€ 960,00
€ 0,24 Buc. (Pe o rola de 4000) (fara TVA)
€ 1.142,40
€ 0,286 Buc. (Pe o rola de 4000) (cu TVA)
4000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Serie
Si4435DYPbF
Tip pachet
SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
40 nC @ 10 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V