Infineon HEXFET Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK IRF1010ESTRLPBF

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
60 V
Serie
HEXFET
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
0.012 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
€ 576,00
€ 0,72 Buc. (Pe o rola de 800) (fara TVA)
€ 696,96
€ 0,871 Buc. (Pe o rola de 800) (cu TVA)
800
€ 576,00
€ 0,72 Buc. (Pe o rola de 800) (fara TVA)
€ 696,96
€ 0,871 Buc. (Pe o rola de 800) (cu TVA)
Informatii despre stoc temporar indisponibile
800
Informatii despre stoc temporar indisponibile
Cantitate | Pret unitar | Per Rola |
---|---|---|
800 - 800 | € 0,72 | € 576,00 |
1600+ | € 0,68 | € 544,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
60 V
Serie
HEXFET
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
0.012 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon