Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Serie
SIPMOS®
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Latime
3.5mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.6mm
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,78
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,928
Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
€ 0,78
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,928
Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
50 - 50 | € 0,78 | € 39,00 |
100 - 200 | € 0,57 | € 28,50 |
250 - 450 | € 0,53 | € 26,50 |
500 - 1200 | € 0,48 | € 24,00 |
1250+ | € 0,45 | € 22,50 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Serie
SIPMOS®
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Latime
3.5mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.6mm
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.