Documente tehnice
Specificatii
Channel Type
N
Maximum Continuous Drain Current
220 mA
Maximum Drain Source Voltage
25 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Typical Gate Charge @ Vgs
0.49 nC @ 4.5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Inaltime
0.93mm
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P.O.A.
Standard
1
P.O.A.
Standard
1
Documente tehnice
Specificatii
Channel Type
N
Maximum Continuous Drain Current
220 mA
Maximum Drain Source Voltage
25 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Typical Gate Charge @ Vgs
0.49 nC @ 4.5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Inaltime
0.93mm