Documente tehnice
Specificatii
Marca
WolfspeedMaximum Drain Source Voltage
1200 V
Maximum Drain Source Resistance
4.6 mΩ
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
50 mW
Maximum Gate Source Voltage
-4 V, 19 V
Temperatura maxima de lucru
+175 °C
Transistor Material
SiC
Lungime
80mm
Typical Gate Charge @ Vgs
1330 nC @ 4/15V
Latime
53mm
Number of Elements per Chip
1
Temperatura minima de lucru
-40 °C
Inaltime
15.75mm
Tara de origine
United States
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€ 1.078,30
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Buc. (cu TVA)
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Documente tehnice
Specificatii
Marca
WolfspeedMaximum Drain Source Voltage
1200 V
Maximum Drain Source Resistance
4.6 mΩ
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
50 mW
Maximum Gate Source Voltage
-4 V, 19 V
Temperatura maxima de lucru
+175 °C
Transistor Material
SiC
Lungime
80mm
Typical Gate Charge @ Vgs
1330 nC @ 4/15V
Latime
53mm
Number of Elements per Chip
1
Temperatura minima de lucru
-40 °C
Inaltime
15.75mm
Tara de origine
United States