Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
90 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Temperatura maxima de lucru
+175 °C
Inaltime
9.01mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 21,30
€ 4,26 Buc. (Intr-un pachet de 5) (fara TVA)
€ 25,35
€ 5,069 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 21,30
€ 4,26 Buc. (Intr-un pachet de 5) (fara TVA)
€ 25,35
€ 5,069 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 4,26 | € 21,30 |
25 - 45 | € 3,62 | € 18,10 |
50 - 120 | € 3,09 | € 15,45 |
125 - 245 | € 2,90 | € 14,50 |
250+ | € 2,46 | € 12,30 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
90 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Temperatura maxima de lucru
+175 °C
Inaltime
9.01mm
Temperatura minima de lucru
-55 °C
Detalii produs