Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Serie
SQ Rugged
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
1.55mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 24,40
€ 2,44 Buc. (Intr-un pachet de 10) (fara TVA)
€ 29,04
€ 2,904 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 24,40
€ 2,44 Buc. (Intr-un pachet de 10) (fara TVA)
€ 29,04
€ 2,904 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 2,44 | € 24,40 |
50 - 90 | € 1,93 | € 19,30 |
100 - 240 | € 1,67 | € 16,70 |
250 - 490 | € 1,54 | € 15,40 |
500+ | € 1,27 | € 12,70 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Serie
SQ Rugged
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
1.55mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs